| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device that enables a wiring structure to be formed by a low-cost process, the wiring structure connecting to the backside, and the semiconductor device. <P>SOLUTION: The manufacturing method of this invention for a semiconductor device includes a half-cut step of doing half-cut dicing on a scribe area from the front surface side, where an element region 101 of a silicon substrate 100 is formed, to form a groove in the silicon substrate 100, a protection film formation step of forming a protection film on the surface where the groove is to be cut, a metal film formation step of forming a metal film on the silicon substrate 100's front surface side, a wiring structure formation step of patterning a metal film to form a wiring structure, and a grinding step of grinding the backside of the substrate 100 to expose the wiring structure at the backside. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
