| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, which inhibits the film reduction of an insulating film formed under a metal film even when the metal film is worked. SOLUTION: In the manufacturing method for the semiconductor device, the metal film 4 constituting a gate electrode is formed on a gate insulating film 3. When the metal film 4 is formed, a part of the metal film 4 is removed by a wet etching treatment using specified chemicals. COPYRIGHT: (C)2007,JPO&INPIT
|
