| 摘要 |
PROBLEM TO BE SOLVED: To perform stable exposure by preventing light from entering silicon carbide in exposure, and hence avoiding variations in the quantity of light caused by reflection light in the pattern exposure of an exposure process. SOLUTION: An Si film 12 having low light transmission properties is provided on the surface of a 4H-SiC wafer 11 for absorbing or reflecting light to which a photoresist film 13 is exposed by the Si film 12. COPYRIGHT: (C)2007,JPO&INPIT
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