| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon device which prevents foreign substances from being generated, and also to provide a manufacturing method of a liquid jetting head. SOLUTION: The manufacturing method of the silicon device equipped with a wiring pattern at one face of a silicon substrate 130 includes: a layer forming process for sequentially forming a ground layer 36 and a metal layer 39 which constitute the wiring pattern on the entire surface of the silicon substrate 130; a metal layer 39 removing process for removing by etching the metal layer 39 at the other face and side faces of the silicon substrate 130; a mask forming process for forming a mask by applying a resist onto the one face of the silicon substrate 130 in a state with a protecting film bonded to the other face of the silicon substrate 130, and then by carrying out exposure and development; and an etching process for forming in a wiring shape by etching the metal layer 38 and the ground layer 36 via the mask under a condition that the protecting film is removed. COPYRIGHT: (C)2007,JPO&INPIT
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