发明名称 METHOD OF PROGRAMMING AND VERIFYING CELLS OF A NONVOLATILE MEMORY AND RELATIVE NAND FLASH MEMORY
摘要 A method of programming cells in a nonvolatile memory is based upon a Global Verify operation and a Byte-by-byte Verify operation. The cells of a destination page of the nonvolatile memory are programmed, and logic values stored in the programmed cells of a source page of the same memory are verified that they have been correctly copied into corresponding cells of the destination page. The method carries out the fast but inadequate-at-times Global Verify operation, and if the Global Verify operation fails for a certain number of attempts, the Byte-by-byte Verify operation is carried out, which is slower but accurate.
申请公布号 US2007109866(A1) 申请公布日期 2007.05.17
申请号 US20060539708 申请日期 2006.10.09
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JEONG KUHONG;LEE HYUNGSANG;MULATTI JACOPO
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
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