| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and apparatus for grinding the underside of a semiconductor wafer bonded together with a support member to finish so that it has an exact thickness. <P>SOLUTION: This grinding method for the underside of the semiconductor wafer grindes the underside 3b of the semiconductor wafer 3 bonded together with a support base 4 at the surface side 3a of the wafer on which a circuit pattern 3c is formed. After the thickness t1 of only the semiconductor wafer 3 before the grinding is measured, the underside 3b of the semiconductor wafer 3 is ground, based on the machining allowance δ2 obtained by subtracting the final thickness δ3 after the grinding from this thickness t1. <P>COPYRIGHT: (C)2007,JPO&INPIT |
