| 摘要 |
PROBLEM TO BE SOLVED: To provide a simulation circuit for simulating the operation of a magnetic tunnel junction (MTJ) device having at least a free magnetization layer and a fixed magnetization layer. SOLUTION: The simulation circuit includes: a closed switch loop for simulating the magnetization in the free magnetization layer and the fixed magnetization layer, in other words, for simulating for data recording the magnetization including a parallel state and an anti-parallel state so that the free magnetization layer and the fixed magnetization layer is simulated by recording data; a first writing loop for simulating a first quadrant of the operating region of the MTJ device; a second, third, and fourth writing loops for simulating second, third, and fourth quadrants of the operating region, respectively; a first resistor for simulating the wire resistance of bit lines; a second resistor for simulating the wire resistance of writing word lines; and a third resistor for simulating the resistance of the MTJ device. COPYRIGHT: (C)2007,JPO&INPIT |
