发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for lowering a contact resistance by enlarging a contact area with a contact even in the projected semiconductor layer having a small cross-sectional area. SOLUTION: The semiconductor device comprises a projected semiconductor layer formed on a semiconductor substrate, and a contact area which is in contact with a ceiling surface of the projected semiconductor layer and a part of the side wall thereof and is electrically connected to the projected semiconductor layer. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007123415(A) |
申请公布日期 |
2007.05.17 |
申请号 |
JP20050311391 |
申请日期 |
2005.10.26 |
申请人 |
SHARP CORP;MASUOKA FUJIO |
发明人 |
MASAOKA AKIRA;YOKOYAMA TAKASHI;HORII SHINJI;MASUOKA FUJIO |
分类号 |
H01L21/768;H01L21/8247;H01L27/115;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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