发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a method for lowering a contact resistance by enlarging a contact area with a contact even in the projected semiconductor layer having a small cross-sectional area. SOLUTION: The semiconductor device comprises a projected semiconductor layer formed on a semiconductor substrate, and a contact area which is in contact with a ceiling surface of the projected semiconductor layer and a part of the side wall thereof and is electrically connected to the projected semiconductor layer. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007123415(A) 申请公布日期 2007.05.17
申请号 JP20050311391 申请日期 2005.10.26
申请人 SHARP CORP;MASUOKA FUJIO 发明人 MASAOKA AKIRA;YOKOYAMA TAKASHI;HORII SHINJI;MASUOKA FUJIO
分类号 H01L21/768;H01L21/8247;H01L27/115;H01L29/78;H01L29/788;H01L29/792 主分类号 H01L21/768
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