| 摘要 |
PROBLEM TO BE SOLVED: To provide a graphite member for an internal member of a beam line which can remarkably reduce particles which enter into a surface of a wafer in an ion implantation apparatus of a high-current and low-energy type. SOLUTION: The graphite member for the internal member of the beam line of the ion implantation apparatus has a bulk density of 1.80 Mg/m<SP>3</SP>and an electric resistivity of 9.5μΩm. Preferably, an R value obtained by dividing a D band strength of 1,370 cm<SP>-1</SP>in a Raman spectrum of a natural fracture of the above graphite member by a G band strength of 1,570 cm<SP>-1</SP>shall be 0.20 or lower. COPYRIGHT: (C)2007,JPO&INPIT
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