| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure for adding an effective stress without influencing the arrangement of an element separation region to improve characteristics of a field effect transistor having a channel region, a source region, and a drain region which are arranged in an active semiconductor region. SOLUTION: A buried dielectric stressor element 102 having a horizontally extending upper surface is arranged below one part of an active semiconductor region 104 separated by a trench separation region 106. This dielectric stressor consists of an oxide film by oxidation of a porous silicon, and generates a compression or extension stress based on the degree of porous formation. COPYRIGHT: (C)2007,JPO&INPIT |
