METHOD OF DEFINING SEMICONDUCTOR FABRICATION PROCESS UTILIZING TRANSISTOR INVERTER DELAY PERIOD

摘要

A novel method and apparatus for defining process variation in a digital RF processor (DRP). The invention is well suited for use in highly integrated system on a chip (SoC) radio solutions that incorporate a very large amount of digital logic circuitry. The method and apparatus provide direct measurement of fabrication process variation in circuits without requiring any additional test equipment by utilizing a time to digital converter (TDC) circuit already present in the chip. The TDC circuit relies on the time delay in an inverter chain to sample a high speed CKV clock using a slow FREF clock. Calculation of inverse time provides a direct correlation for fabrication process variation in each die.