METHOD FOR FABRICATING INTERLAYER OF DIELECTRIC IN SEMICONDUCTOR DEVICE,申请号KR20050108778-传众专利搜索

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发明名称	METHOD FOR FABRICATING INTERLAYER OF DIELECTRIC IN SEMICONDUCTOR DEVICE
摘要
申请公布号	KR20070051215(A)	申请公布日期	2007.05.17
申请号	KR20050108778	申请日期	2005.11.14
申请人	HYNIX SEMICONDUCTOR INC.	发明人	CHO, GYU DONG;LEE, AN BAE
分类号	H01L21/3205	主分类号	H01L21/3205
代理机构		代理人
主权项
地址

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