METHOD FOR MAKING DEEP DETAIL TRANSISTOR IN SEMICONDUCTOR,申请号KR20020086404-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	METHOD FOR MAKING DEEP DETAIL TRANSISTOR IN SEMICONDUCTOR
摘要
申请公布号	KR100713326(B1)	申请公布日期	2007.05.04
申请号	KR20020086404	申请日期	2002.12.30
申请人		发明人
分类号	H01L29/78;H01L21/28;H01L21/336;H01L21/8234;H01L29/49	主分类号	H01L29/78
代理机构		代理人
主权项
地址

您可能感兴趣的专利

MODULAR MICRO-OPTICAL SYSTEMS AND METHOD OF MAKING SUCH SYSTEMS

Weight supporting frame for weightlifters

Moated animal feeding dish

Electronically driven control valve

Corrosion resistant flexible reflective film for solar energy applications

Electrostatic separation of plastic materials

Drive shaft apparatus for a susceptor

COVER OF AN AIR BAG DEVICE

Process for preparing aldehydes from base sensitive amines

PROCESS FOR THE PRODUCTION OF GAMMA-BUTYROLACTONE

Esters of 4-hydroxy-1,3-benzenedimethanol and compositions and methods employing such compounds

Purge flow control in rotary blood pumps

Oxygen enrichment of fuels

ARRANGEMENT FOR THE ISOTROPIC EMISSION AND ISOTROPIC RECEPTION OF LIGHT

SPACE ENVIRONMENT TESTING DEVICE

TIGHTLY-CLOSING HOUSING FOR AN ELECTRONIC CIRCUIT, PARTICULARLY FOR A CONTROL DEVICE OF AN INTERNAL COMBUSTION ENGINE

Universal adjustable mount

Pressure sensor system