| 摘要 |
A thin-film semiconductor device includes, on the same substrate, a thin-film transistor, in which an active layer, a gate insulating film, and a gate electrode are laminated, and a capacitive element, in which a first electrode formed using a semiconductor film formed on the same layer as the active layer, a dielectric film formed on the same layer as the gate insulating film, and a second electrode formed on the same layer as the gate electrode are laminated. In the capacitive element, in plan view, the dielectric film has a first region that is formed in a region inside outer circumferences of the first and second electrodes and that has a film thickness smaller than that of the gate insulating film, and a second region that is formed in a region outside the first region and that has a film thickness larger than that of the first region. |
