发明名称 NOR TYPE FLASH MEMORY DEVICE HAVING TWIN BIT CELL SCHEME
摘要 <p>A NOR-type flash memory device comprises a plurality twin-bit memory cells arranged so that pairs of adjacent memory cells share a source/drain region and groups of four adjacent memory cells are electrically connected to each other by a single bitline contact.</p>
申请公布号 KR20060074231(A) 申请公布日期 2006.07.03
申请号 KR20040112899 申请日期 2004.12.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOON, JAE MAN;SUNG, SUK KANG;PARK, DONG GUN;LEE, CHOONG HO;KIM, TAE YONG
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
代理机构 代理人
主权项
地址