发明名称 Electron-beam exposure method and patterning method using the same
摘要 A variable shaped beam exposure method and a pattern forming method using the same exhibit excellent linearity insofar as the variation in measured critical dimension from design critical dimension is concerned. First, the design critical dimension of one of a plurality of patterns that can be formed through the use of the variable shaped beam exposure method is determined. If the value of the critical dimension exceeds a predetermined value, the selected pattern is formed using a first exposure dose which has previously designated for this case. On the other hand, if the value of the critical dimension is less than the predetermined value, the selected pattern is formed using a second exposure dose that is equal to the first exposure dose plus a supplementary exposure dose.
申请公布号 KR100594225(B1) 申请公布日期 2006.07.03
申请号 KR20000082757 申请日期 2000.12.27
申请人 发明人
分类号 H01L21/027;G03F7/20;H01J37/302 主分类号 H01L21/027
代理机构 代理人
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