发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor device includes an interlevel insulating film disposed on a semiconductor substrate and having an opening formed therein. An interconnection main layer, which contains Cu as a main component, is embedded in the opening. A barrier film is interposed between the interlevel insulating film and the interconnection main layer within the opening. The barrier film contains, as a main component, a compound of a predetermined metal element with a component element of the interlevel insulating film. |
申请公布号 |
KR20060042167(A) |
申请公布日期 |
2006.05.12 |
申请号 |
KR20050015478 |
申请日期 |
2005.02.24 |
申请人 |
SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER |
发明人 |
KOIKE JUNICHI;WADA MAKOTO;TAKAHASHI SHINGO;SHIMIZU NORIYOSHI;SHIBATA HIDEKI;NISHIKAWA SATOSHI;USUI TAKAMASA;NASU HAYATO;YOSHIMARU MASAKI |
分类号 |
H01L21/28;H01L21/3205;H01L21/768;H01L23/48;H01L23/52;H01L23/532 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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