SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate (1), a pad electrode (3) formed on the semiconductor substrate (1) through an insulation layer (2) made of silicon oxide, silicon nitride or the like, a supporting plate (5) bonded to a top surface of the semiconductor substrate (1) to cover the pad electrode (3) and a via hole formed in the semiconductor substrate (1) and extending from a back surface of the semiconductor substrate (1) to the pad electrode (3), wherein an aperture of the via hole at a portion close to the pad electrode (3) is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate (1).