| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<p>Upstanding thin-film channel regions 5 having different heights are formed between source regions 7 and drain regions 8 of MOS transistors, respectively.</p> |
| 申请公布号 |
KR20060041956(A) |
申请公布日期 |
2006.05.12 |
| 申请号 |
KR20050012377 |
申请日期 |
2005.02.15 |
| 申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
LIU YONGXUN;SEKIGAWA TOSHIHIRO;MASAHARA MEISHOKU;ISHII KENICHI;SUZUKI EIICHI |
| 分类号 |
H01L27/08;H01L29/78;H01L21/02;H01L21/336;H01L21/8234;H01L21/8238;H01L21/84;H01L27/00;H01L27/088;H01L27/092;H01L27/12;H01L29/423;H01L29/76;H01L29/786 |
主分类号 |
H01L27/08 |
| 代理机构 |
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