发明名称 METHOD FOR FORMING METALLIC WIRING OF SEMICONDUCTOR MEMORY ELEMENT
摘要 PROBLEM TO BE SOLVED: To prevent the occurrence of short-circuit due to a bridge between metallic wiring electrically connected to a drain contact plug and a source contact plug. SOLUTION: This method for forming metallic wiring comprises a step to carry out the patterning of a first inter-layer insulating film, and to form a drain contact plug; a step to project the drain contact plug by recessing the first inter-layer insulating film in a first etching process; a step to evaporate a nitride film along the difference in level on an overall structure including the drain contact plug; a step to form a second inter-layer insulating film on the nitride; a step to form a trench by carrying out the patterning of the second inter-layer insulating film, so that the nitride film formed at the projecting site of the drain contact plug can be exposed; a step to expose the drain contact plug by removing the nitride film exposed through the trench in a second etching process; and a step to form metallic wiring so that the trench can be buried. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006121038(A) 申请公布日期 2006.05.11
申请号 JP20050165549 申请日期 2005.06.06
申请人 HYNIX SEMICONDUCTOR INC 发明人 KIN CHUAN-SOO
分类号 H01L21/8247;H01L21/768;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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