| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase transformation memory wherein current (reset current) necessary for changing to amorphous substance is reduced. SOLUTION: The semiconductor device is provided with a memory cell 30 comprised of phase transformation films; a plug electrode CP1 whose one end is directly connected with the lower main surface of the memory cell 30, and the other end is connected with one source/drain layer 3 of an MOS transistor 10, so as to electrically connect the source/drain layer 3 and the memory cell 30, and which becomes a lower electrode of the memory cell 30; and a plug electrode CP10 whose one end is directly connected with the upper main surface of the memory cell 30, and the other end is connected with a bit wiring layer WR arranged on an interlayer insulating film 9 which is provided covering the memory cell 30, so as to electrically connect the bit wiring layer WR and the memory cell 30 and which becomes an upper electrode of the memory cell 30. COPYRIGHT: (C)2006,JPO&NCIPI
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