Reduction of oxide layer on a semiconductor surface by heat treatment in a chamber in a temperature-time process to a temperature of 900-1050degreesC useful in semiconductor technology, comprises treatment with CO2-containing process gas

摘要

Reduction of oxide layer on a semiconductor surface by heat treatment in a chamber in a temperature-time process to a temperature of 900-1050[deg]C where the semiconductor is treated during the process with CO2-containing process gas.