发明名称 STATES ENCLODING IN MULTI-BIT FLASH CELLS FOR OPTIMIZING ERRROR RATE
摘要 <p>To store N bits of M=2 logical pages, the bits are interleaved and the interleaved bits are programmed to [N/M] memory cells, M bits per cell. Preferably, the interleaving puts the same number of bits from each logical page into each bit-page of the [N/M] cells. When the bits are read from the cells, the bits are de-interleaved. The interleaving may be deterministic or random, and may be effected by software or by dedicated hardware.</p>
申请公布号 WO2006048861(A2) 申请公布日期 2006.05.11
申请号 WO2005IL01116 申请日期 2005.10.26
申请人 MURIN, MARK;M-SYSTEMS FLASH DISK PIONEERS LTD. 发明人 MURIN, MARK
分类号 G06F12/00 主分类号 G06F12/00
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