| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the flatness of a semiconductor device by suppressing the leaving of any polishing abrasive on the surface of its conductive film after the chemical mechanical polishing of its conductive film. <P>SOLUTION: A method for manufacturing a semiconductor device includes a process for depositing an insulating film on a substrate, a process for forming recesses in the insulating film, a process for so depositing a conductive film as to bury it in the recesses, and a process for removing the conductive film extruded from the recesses by so pressing down on the substrate a polishing pad supplied with a polishing abrasive as to polish the substrate. After removing the conductive film, the polishing abrasive left on the conductive film buried in the recesses is removed. Consequently, the flatness of the semiconductor device is so improved without polishing excessively the conductive film as to be able to suppress the distribution of the sheet resistances of wiring independently of the condensation/rarefaction of wiring patterns. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
