| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a manufacturing cost when a semiconductor crystal of good quality and low dislocation density is manufactured. <P>SOLUTION: A sputtering apparatus is used, an AlN is sputtered with a thickness of 65 nm on the principal surface of a sapphire substrate 1 of a thickness of 500 μm with a c-face as the principal surface. Thereby, a buffer layer 2 with a thickness of 250 nm made of the AlN is deposited. The side wall cross section of the buffer layer 2 exposed by subsequent dry etching is used as a crystal growth nucleus. At the time of sputtering implementation, a temperature in the sputtering apparatus (substrate temperature) is made into about 430°C. By such a manufacturing method, since the depositing of the buffer layer 2 is performed by sputtering, it is eliminated that a crystal growth process performed using a crystal growth furnace is divided into a plurality of processes. Otherwise, the depositing of the buffer layer can be performed by sputtering. For this sake, the good quality semiconductor crystal of low dislocation density can be manufactured at a lower cost than a conventional art. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
