Semiconductor device and method for fabricating the same

摘要

Gate electrodes 5 A through 5 F are formed to have the same geometry, and protruding parts of the gate electrodes 5 A through 5 F extend across an isolation region onto impurity diffusion regions. The gate electrode 5 B and P-type impurity diffusion regions 7 B 6 are connected through a shared contact 9 A 1 to a first-level interconnect M 1 H, and the gate electrode 5 E and N-type impurity diffusion regions 7 A 6 are connected through a shared contact 9 A 2 to a first-level interconnect M 1 I. In this way, contact pad parts of the gate electrodes 5 A through 5 F can be located apart from active regions of a substrate for MOS transistors. This suppresses the influence of the increased gate length due to hammerhead and gate flaring. As a result, transistors TrA through TrF can have substantially the same finished gate length.