| 摘要 |
A radiation-emitting thin-film semiconductor component with a multilayer structure ( 12 ) based on GaN, which contains an active, radiation-generating layer ( 14 ) and has a first main area ( 16 ) and a second main area ( 18 )-remote from the first main area-for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main area ( 16 ) of the multilayer structure ( 12 ) is coupled to a reflective layer or interface, and the region ( 22 ) of the multilayer structure that adjoins the second main area ( 18 ) of the multilayer structure is patterned one- or two-dimensionally.
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