SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY

摘要

An antireflection film suitable for use in lithography process using light, such as ArF excimer laser or F2 excimer laser, that is high in the effect of prevention of reflection light, being free from intermixing with photoresist, and that exhibits an etching rate greater than that of photoresist, being capable of forming a photoresist pattern with no footing figuration at its underpart; and a composition for formation of antireflection film for lithography that is suitable for formation of the antireflection film. There is provided a composition for formation of antireflection film for lithography, comprising a polymer compound, a crosslinking compound, a crosslinking catalyst, a sulfonic ester compound and a solvent.