IMPROVED DEPOSITION RATE PLASMA ENHANCED CHEMICAL VAPOR PROCESS,申请号CA20052582302-传众专利搜索

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发明名称	IMPROVED DEPOSITION RATE PLASMA ENHANCED CHEMICAL VAPOR PROCESS
摘要
申请公布号	CA2582302(A1)	申请公布日期	2006.05.11
申请号	CA20052582302	申请日期	2005.10.19
申请人	DOW GLOBAL TECHNOLOGIES INC.	发明人	GABELNICK, AARON M.;LAMBERT, CHRISTINA A.
分类号	C23C16/40;B05D7/24;C23C16/30	主分类号	C23C16/40
代理机构		代理人
主权项
地址

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