MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element for making the light emission output raised by improving quality in crystallinity of an n-type contact layer without making the drive voltage raised, and for improved throughput by simplifying the structure, and reducing the cost.

SOLUTION: A high carrier concentration n-type semiconductor layer 1, whose n-type impurity concentration is 2×1019cm-3or higher, is formed as a first layer of an n-type contact layer 10. A low carrier concentration n-type semiconductor layer 7, whose n-type impurity concentration is 2×1017cm-3or lower, is formed over it as the second layer of the n-type contact layer 10, with V/III ratio at growth being 1,500 or smaller at a growth temperature of 1,150°C or higher.

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