| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light receiving device that is applicable to a solid-state imaging device of high sensitivity and low leakage current. SOLUTION: A device-isolation insulating region formed in a surface layer of a semiconductor substrate demarcates an active region. A first layer of a first conductivity type is formed in a part of the surface layer of the active layer. The first layer demarcates, underneath thereof, a depletion layer. A first region is arranged between the first layer and the device-isolation insulating region. The first region, seen from the front surface of the semiconductor substrate, possesses overlapped portions with both the first layer and the device-isolation insulating region. The first region extends to a deeper region than the first layer. A MISFET is formed in a part of the active region where the first layer is not arranged. The MISFET comprises first and second impurity-diffused regions of a second conductivity type, interposing a channel region, arranged in the surface layer of the semiconductor substrate; and a gate electrode formed on the channel region via a gate insulating film. The first impurity-diffused region is electrically connected to the first layer. COPYRIGHT: (C)2006,JPO&NCIPI
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