| 摘要 |
PROBLEM TO BE SOLVED: To prevent the reduction of concentration on the surface of a silicon substrate or the surface of a polysilicon electrode due to the external diffusion of impurity, even when simultaneously executing plasma doping and activating annealing. SOLUTION: A method for manufacturing a semiconductor device is executed in a process for forming a nitride film 14 on the surface of a silicon substrate which is a substrate to be processed or a polysilicon film formed on the substrate to be processed, and a process for heating the substrate to be processed at≥700°C and performing plasma discharge by gas containing phosphorus elements to apply phosphorus doping processing to the silicon substrate or the polysilicon film through the nitride film. COPYRIGHT: (C)2006,JPO&NCIPI
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