| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD device which can restrain deterioration of a thin film and a substrate due to plasma damage and particles by a simple device constitution. SOLUTION: A plasma CVD device 1 which has a chamber 2, a pressure reducer 4 for reducing the pressure inside the chamber 2 to the vacuum pressure, a substrate holder 3 for holding a substrate K which is provided inside the chamber 2 and is an object of film formation and a gas introduction 5 for introducing gas selected in accordance with a thin film to be formed into the chamber 2 and a plasma generator 6 for activating molecule of the gas by plasma energy has a shield plate SP wherein a plurality of through-holes are formed, dividing the inside of the chamber 2 into a lower chamber 21 and an upper chamber 22. The lower chamber 21 is connected with the gas introduction 5, the upper chamber 22 is connected with the pressure reducter 4 and has the substrate holding part 3 in the inside. The substrate holder 3 can hold the substrate K with a thin film forming surface KF thereof perpendicularly downward. COPYRIGHT: (C)2006,JPO&NCIPI
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