| 摘要 |
PROBLEM TO BE SOLVED: To curtail a photolithography process and to enhance the integration of a semiconductor device by the reduction of an active area. SOLUTION: After an element isolation area 105 is formed by using a silicon nitride film 102 for forming a field, this silicon nitride film 102 is patterned, thereby forming a gate trench 114b. Next, after gate electrode materials 111 to 113 are embedded in the gate trench 114b and etched back, the silicon nitride film 102 is removed. A contact plug is embedded in a contact hole formed thereby. Thus, the contact plug can be formed without using a diffusion layer contact pattern, and also, since the fringe of the contact plug substantially coincides with a boundary between the element isolation area and the active area, the active area can be reduced. COPYRIGHT: (C)2006,JPO&NCIPI
|
