| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging apparatus capable of preventing the generation of the crosstalk among pixels as well as improving sensitivity without disturbing the light path due to a wiring layer at the time of entering oblique light. SOLUTION: The solid state image sensing device is provided with a photodiode PD formed in the surface of a semiconductor substrate 10, a first insulating layer 12 formed on the photodiode PD, a second insulating layer 21 formed on the first insulating layer 12, a third insulating layer 22 formed on the second insulator layer 21, and a micro lens ML formed on the third insulating layer 22. A first lens L1 is formed in the interface between the first insulating layer 12 and the second insulating layer 21. A second lens L2 is formed in the interface between the second insulating layer 21 and the third insulating layer 22. The first lens L1 has a focus to the photodiode PD side from the interface between the first insulating layer 12 and the second insulating layer 21. The second lens L2 has a focus to the micro lens ML side from the interface between the second insulating layer 21 and the second insulating layer 22. COPYRIGHT: (C)2006,JPO&NCIPI
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