Non-volatile memory device providing controlled bulk voltage during programming operations

摘要

Disclosed is a non-volatile memory device and a method of programming the same. The non-volatile memory device comprises a plurality of memory cells that are programmed by supplying first and second program voltages thereto. In cases where the second program voltage rises above a predetermined detection voltage, the first program voltage is prevented from being supplied to the memory cell until the second program voltage falls below the detection voltage.