| 摘要 |
A pressure-contact type semiconductor device such as an insulated gate bipolar transistor. The device includes a semiconductor chip, a gate electrode on a first surface of the semiconductor chip, an emitter electrode insulated and separated from the gate electrode, and an emitter sensing electrode on the first surface of the semiconductor chip. A collector layer is on the second surface of the semiconductor chip. The emitter sensing electrode monitors the emitter voltage. Because the emitter sensing electrode is on the semiconductor chip, the emitter sensing electrode is not influenced by inductance between an emitter and an emitter terminal. <IMAGE> <IMAGE> |
