EXPOSURE CONDITION CORRECTING METHOD, SUBSTRATE PROCESSING EQUIPMENT AND COMPUTER PROGRAM

摘要

A resist film is formed on a wafer (W) by using a resist coating/development process system (1), which performs resist film formation and development process to the wafer (W), and exposure equipment (14) which performs exposure process. A plurality of portions of the resist film are sequentially exposed with the same pattern by changing focus values and are developed. The resist coating/development process system (1) measures the line width of an obtained resist pattern by scatterometry technology, decides an optimum focus value from a relationship between the obtained line width and a focus value corresponding to the width, and transmits data for correcting the focus value of the exposure equipment (14) to the exposure equipment (14) by data communication without manual operation. The exposure equipment (14) corrects the focus value based on the data.