发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To secure an appropriate cooling performance for a semiconductor element by suppressing the size of voids occurring in a solder layer in a semiconductor device which is such that the semiconductor element is bonded on a substrate via the solder layer formed of a soldering material. SOLUTION: In the semiconductor device 100 which is such that the semiconductor element 30 is bonded on the substrate 10 via the solder layer 20 formed of a soldering material, the semiconductor element 30 generates heat when it is driven and so it has an in-plane temperature distribution. Letting a maximum temperature allowed for the semiconductor element 30 when it is driven be Tt and a temperature on the temperature distribution which corresponds to a position x of the semiconductor element 30 be Tc, a value obtained by subtracting the temperature Tc from the maximum temperature Tt is defined as a temperature marginΔT. The larger the temperature marginΔT is at the position x in the plane of the semiconductor element 30, the larger maximum diameter dt the voids 40 in the solder layer 20 have at the position x. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006120837(A) 申请公布日期 2006.05.11
申请号 JP20040306780 申请日期 2004.10.21
申请人 DENSO CORP;NIPPON SOKEN INC 发明人 HIRASAWA NAOKI;ONIMARU SADAHISA;MATSUI HIROHITO;MASAMITSU KUNIAKI;HIRANO NAOHIKO
分类号 H01L21/52 主分类号 H01L21/52
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