| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To preclude film separation from a wafer edge and the generation of particles. <P>SOLUTION: A step of forming a nitride film on a substrate, and a step of depositing an insulating film and a metal film on the nitride film to form a wiring structure are performed. Subsequently, the end of the substrate is polished and when the nitride film is exposed at the end of the substrate, the polishing is terminated. As a result, at a time when the nitride film having adherence to a wafer is exposed, the end of the wafer, namely, a bevel can be stopped in polishing. Accordingly, it is possible to restrict the film separation from the bevel, and reduce the generation of particles. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
