发明名称 Semiconductor device and manufacturing method thereof
摘要 A semiconductor device of this invention comprises a semiconductor substrate, a plurality of memory regions provided on the semiconductor substrate, the plurality of memory regions having the same structure, and functional region provided on the semiconductor substrate, the functional region including a different function from the memory.
申请公布号 US2006097287(A1) 申请公布日期 2006.05.11
申请号 US20050319534 申请日期 2005.12.29
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MIZUSHIMA ICHIRO
分类号 H01L21/822;H01L29/94;G11C8/00;H01L21/82;H01L21/8242;H01L21/8244;H01L27/04;H01L27/10;H01L27/108 主分类号 H01L21/822
代理机构 代理人
主权项
地址