| 摘要 |
The operational information read out by the read-out sense amplifier ( 19 ) is transferred via the data line DB to a volatile memory section. The volatile memory section is configured with the volatile memory section ( 21 ) having a SRAM configuration and the second volatile memory section ( 23 ) configured with latch circuits, which are respectively connected in parallel with the data line DB. The operational information, which may be provided depending on an operation state of the write-protect information and other information stored in the non-volatile memory cell MC selected by the word line WLWP, is written and read out with respect to the first volatile memory section ( 21 ) in response to the identification information linked with the operational information. The operational information which must be constantly accessible, is written into the second volatile memory section ( 23 ) in response to the identification information. Thus, the operational information is available in a memory mode depending on the attributes of the operational information.
|
