发明名称 |
System and method for plasma induced modification and improvement of critical dimension uniformity |
摘要 |
Novel interconnect structures possessing a OSG or polymeric-based (90 nm and beyond BEOL technologies) in which advanced plasma processing is utilized to reduce post lithographic CD non-uniformity ("line edge roughness") in semiconductor devices. The novel interconnect structure has enhanced liner and seed conformality and is therefore capable of delivering improved device performance, functionality and reliability.
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申请公布号 |
US2006099816(A1) |
申请公布日期 |
2006.05.11 |
申请号 |
US20040983345 |
申请日期 |
2004.11.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DALTON TIMOTHY J.;DELLA GUARDIA RONALD A.;FULLER NICHOLAS C. |
分类号 |
H01L21/461;H01L21/302;H01L47/00 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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