Level shift circuit and semiconductor circuit device including the level shift circuit

摘要

In a level shift circuit constituted by n-channel MOS transistors (TN-A and TN-B) and p-channel MOS transistors (TP-A and TP-B), p-channel MOS transistors (TP-C and TP-D) constituting a current mirror circuit at the transistors (TP-A and TP-B), thereby limiting a direct tunneling current from VDDH to VSS and enabling high-speed operation.