Apparatus and method for repairing semiconductor memory device

摘要

Apparatus and methods are provided for repairing semiconductor memory devices having an open bit line sense amplifier architecture with cell array blocks having memory blocks formed of edge sub-blocks, main sub-blocks, dummy sub-blocks. Row defects can be processed using a straight edge block when DQ data are outputted by enabling three word lines such that a repair process for the memory device in an edge sub-block or a dummy sub-block has the same repair efficiency as that of a case where defects occur in a main sub-block.