| 摘要 |
A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H<SUB>2</SUB>O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH<SUB>3 </SUB>group to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film ( 62 ) on a substrate ( 61 ), plasmanizing a process gas containing at least any one of He, Ar, H<SUB>2 </SUB>or deuterium, and bringing the low-dielectric insulating film ( 62 ) into contact with the plasma of the process gas.
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