| 摘要 |
A complementary metal oxide semiconductor (CMOS) image sensor and a method for operating the same are provided. The CMOS image sensor includes a pixel array unit having a matrix of pixels, wherein each pixel comprises a charge transfer element for transferring charge collected in a photoelectric conversion element to a charge detection element, and a row drive unit for supplying a voltage to the charge transfer element during part of a charge integration period of the photoelectric conversion element, wherein the supplied voltage causes the charge transfer element to have a negative potential.
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