| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric converter wherein an open circuit voltage and a short circuit current are increased and the photoelectric conversion efficiency is improved without making an n-type conductivity type semiconductor layer contain a high concentration impurity element, and to suppress the discharge amount of carbon dioxide upon manufacturing by providing the photoelectric converter. <P>SOLUTION: The above-mentioned problem is solved by providing the photoelectric converter having one or more pin-type photoelectric conversion layers 10 comprising a p-type semiconductor layer 12, an i-type semiconductor layer 13, and an n-type semiconductor layer 14 containing at least laminated silicon atoms, wherein at least one above-mentioned n-type semiconductor layer 14 in the one or more pin-type photoelectric conversion layers 10 contains nitrogen atoms. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
