| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element having high electric power conversion efficiency and high light outputting efficiency. <P>SOLUTION: In the nitride semiconductor light emitting element, a first electrode 17 composed of a material containing silver, aluminum, or rhodium exists on a contact layer 15, and a second electrode 19 is provided on one surface 13a of a conductive substrate 13 composed of an Al<SB>X</SB>Ga<SB>1-X</SB>N substrate (X is 0-1). Then a p-type nitride semiconductor layer 15 exists between the other surface 13b of the substrate 13 and the contact layer 15, and an n-type nitride semiconductor layer 23 exists between the other surface 13b of the substrate 13 and a p-type nitride semiconductor layer 21. In addition, the active area 25 of a nitride semiconductor exists between the p-type semiconductor layer 21 and n-type semiconductor layer 23, and the contact layer 15 receives strains from the p-type semiconductor layer 21, because the thickness of the layer 15 is smaller than that D2 of the semiconductor layer 21. Moreover, the substrate 13 can transmit the light from the active area 25. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
