| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance semiconductor device capable of connecting a extraction electrode to a conductive film, without depending on the width of the emitter layer, while maintaining a desired current value flowing to the lead out electrode. SOLUTION: An active region 2a, surrounded by an element separation film 3, is provided on a silicon substrate 1. An SiGe alloy layer 4 serving as a base layer and an n-type diffusion layer 5 serving as the emitter layer are provided on the active region 2a, and a groove 60 is formed on the surface of the region 2a between the SiGe alloy layer 4 and the element isolation film 3. The SiGe alloy layer 4 and the n-type diffusion layer 5 are surrounded by a sidewall film 6 made of a silicon oxide film. The sidewall film 6 has the groove 60 provided on the surface of the active region 2a embedded and is provided astride a border 50 between the groove 60 and the element isolation film 3. A polycrystalline silicon film 7 and a silicide film 8 on the n-type diffusion layer 5 are provided over the n-type diffusion layer 5, the sidewall film 6 and the element isolation film 3. After an interlayer insulating film 10 is provided and planarized, and the lead out electrode 21 connecting with the emitter layer (n-type diffusion layer 5) is provided to connect to the silicide film 8 on the element isolation film 3. COPYRIGHT: (C)2006,JPO&NCIPI
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